- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
8,402
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 11.5 A | 12.3 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
2,160
In-stock
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Fairchild Semiconductor | MOSFET 500V 11.5A 0.7Ohm N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 590 mOhms | Enhancement | |||||
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GET PRICE |
3,158
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.5 A | 100 mOhms | Enhancement | PowerTrench SyncFET | ||||
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GET PRICE |
179,900
In-stock
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Fairchild Semiconductor | MOSFET 500V N-CH MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 550 mOhms | Enhancement | |||||
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GET PRICE |
917
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 500V N-CH MOSFET SINGLE GAGE | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 3 V to 5 V | 23 nC | UniFET | |||
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GET PRICE |
626
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 700 mOhms | Enhancement | UniFET | ||||
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GET PRICE |
2,395
In-stock
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onsemi | MOSFET NFET 30V 58A 9MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.5 A | 9 mOhms | Enhancement | |||||
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GET PRICE |
11,700
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Chan MOSFET UniFET-II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 5 V | 23 nC | UniFET | |||||
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GET PRICE |
406
In-stock
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Diodes Incorporated | MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 12 mOhms | 1 V to 3 V | 17 nC | Enhancement | |||
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GET PRICE |
400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 165W | 20 V | Through Hole | TO-220-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||
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GET PRICE |
400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement | |||||
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GET PRICE |
197
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11.5 A | 280 mOhms | 2.1 V | 9.5 nC | Enhancement | ||||
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GET PRICE |
298
In-stock
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Toshiba | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | 30 V | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 265 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | ||||||
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GET PRICE |
323
In-stock
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Toshiba | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 300 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | ||||
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GET PRICE |
3,000
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh Mode 1810pF 37nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 11.5 A | 15 mOhms | 37 nC | Enhancement | PowerDI | ||||||
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GET PRICE |
23,600
In-stock
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Toshiba | MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 340 mOhms | 2.7 V to 3.7 V | 25 nC | DTMOSIV | |||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 104W 890pF 11.5A | SMD/SMT | DFN8x8-5 | Reel | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 300 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET DTMOSIV 600V 340mOhm 11.5A 100W 890pF | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 265 mOhms | 2.7 V to 3.7 V | 25 nC | DTMOSIV |
