- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 1.06 mOhms (1)
- 1.1 mOhms (1)
- 100 mOhms (3)
- 105 mOhms (1)
- 110 mOhms (6)
- 12 mOhms (1)
- 13 mOhms (1)
- 16 mOhms (1)
- 160 mOhms (1)
- 170 mOhms (5)
- 180 mOhms (3)
- 190 mOhms (4)
- 20 mOhms (1)
- 240 mOhms (1)
- 26.5 mOhms (7)
- 27 mOhms (2)
- 40 mOhms (3)
- 44 mOhms (1)
- 45 mOhms (1)
- 6.5 mOhms (1)
- 60 Ohms (4)
- 63 mOhms (1)
- 81 mOhms (1)
- 90 mOhms (3)
- 92 mOhms (1)
- Applied Filters :
55 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
10,643
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 22 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
1,371
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 2.5 V | 270 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
3,117
In-stock
|
Fairchild Semiconductor | MOSFET 80V N ch Dual Cool Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 36 A | 1.06 mOhms | 3.1 V | 195 nC | Enhancement | PowerTrench | ||
|
|
GET PRICE |
4,989
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | ||||
|
|
GET PRICE |
3,234
In-stock
|
Fairchild Semiconductor | MOSFET 40V/20V NCh PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 36 A | 1.1 mOhms | PowerTrench | |||||
|
|
GET PRICE |
532
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS, 36A in TF220 | 10 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 81 mOhms | 86 nC | SupreMOS | ||||||
|
|
GET PRICE |
605
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 86 nC | SupreMOS | |||
|
|
GET PRICE |
869
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOST | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 112 nC | ||||
|
|
GET PRICE |
2,517
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
4,168
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | |||||||
|
|
GET PRICE |
2,988
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 36A 16mOhm 59.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 16 mOhms | 59.3 nC | |||||||
|
|
GET PRICE |
850
In-stock
|
IXYS | MOSFET 500V 36A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | ||||
|
|
GET PRICE |
3,200
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | ||||
|
|
GET PRICE |
473
In-stock
|
Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | |||
|
|
GET PRICE |
2,755
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 36 A | 20 mOhms | |||||||
|
|
GET PRICE |
1,810
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | ||||
|
|
GET PRICE |
963
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 36A 44mOhm 49.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 63 mOhms | 49.3 nC | |||||||
|
|
GET PRICE |
573
In-stock
|
IXYS | MOSFET 36 Amps 300V 0.11 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 36 A | 92 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | ||
|
|
GET PRICE |
625
In-stock
|
IXYS | MOSFET MOSFET N-CH 300V 36A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 36 A | 110 mOhms | Enhancement | |||||
|
|
GET PRICE |
1,265
In-stock
|
IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 4 V | 42 nC | Enhancement | |||
|
|
GET PRICE |
520
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 26.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 26.5 mOhms | 42 nC | Enhancement | |||||
|
|
GET PRICE |
53
In-stock
|
IXYS | MOSFET 600V 36A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 190 mOhms | Enhancement | HyperFET | ||||
|
|
GET PRICE |
132
In-stock
|
IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | ||
|
|
GET PRICE |
55
In-stock
|
IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | ||
|
|
GET PRICE |
141
In-stock
|
IXYS | MOSFET 36 Amps 300V 0.11 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 36 A | 110 mOhms | Enhancement | |||||
|
|
GET PRICE |
2,214
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 34 V | 36 A | 12 mOhms | 6.1 nC | OptiMOS | ||||
|
|
GET PRICE |
902
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 36 A | 40 mOhms | 32 nC | Enhancement | ||||
|
|
GET PRICE |
62
In-stock
|
IXYS | MOSFET DIODE Id36 BVdass600 | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 105 mOhms | Enhancement | HyperFET | ||||
|
|
GET PRICE |
68
In-stock
|
IXYS | MOSFET 600V 36A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 190 mOhms | Enhancement | HyperFET | ||||
|
|
GET PRICE |
58
In-stock
|
IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV |
