MOSFET - Kaimeite

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6 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	BSS126 H6327		GET PRICE	PDF RFQ	16,503 In-stock	Infineon Technologies	MOSFET N-Ch 600V 21mA SOT-23-3	20 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	21 mA	280 Ohms	- 2.7 V	2.1 nC	Depletion
	BSS127 H6327		GET PRICE	PDF RFQ	13,759 In-stock	Infineon Technologies	MOSFET N-Ch 600V 21mA SOT-23-3	20 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	21 mA	310 Ohms	1.4 V	1 nC	Enhancement
	BSS127H6327XTSA2		GET PRICE	PDF RFQ	14,088 In-stock	Infineon Technologies	MOSFET N-Ch 600V 21mA SOT-23-3	20 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	21 mA	310 Ohms	1.4 V	1 nC	Enhancement
	BSS126 H6906		GET PRICE	PDF RFQ	4,813 In-stock	Infineon Technologies	MOSFET N-Ch 600V 21mA SOT-23-3	20 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	21 mA	280 Ohms	- 2.7 V	2.1 nC	Depletion
	BSS126H6327XTSA2		GET PRICE	PDF RFQ	6,718 In-stock	Infineon Technologies	MOSFET N-Ch 600V 21mA SOT-23-3	20 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	21 mA	280 Ohms	- 2.7 V	2.1 nC	Depletion
	BSS126H6906XTSA1		GET PRICE	PDF RFQ	3,000 In-stock	Infineon Technologies	MOSFET N-Ch 600V 21mA SOT-23-3	20 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	21 mA	280 Ohms	- 2.7 V	2.1 nC	Depletion

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