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- Qg - Gate Charge :
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11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
1,497
In-stock
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onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 235 A | 1.1 mOhms | 2.5 V | 65 nC | Enhancement | |||
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GET PRICE |
1,569
In-stock
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Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.1 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
1,550
In-stock
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onsemi | MOSFET NFET SO8FL 60V 235A 1.5MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 235 A | 1.2 mOhms | 1.2 V | 91 nC | Enhancement | |||
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GET PRICE |
531
In-stock
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Fairchild Semiconductor | MOSFET PT3 75V 3.2mohm | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.2 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
1,286
In-stock
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onsemi | MOSFET T6-D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 235 A | 1.1 mOhms | 2.5 V | 65 nC | Enhancement | |||
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GET PRICE |
254
In-stock
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Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.2 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
250
In-stock
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IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 235 A | 4.4 mOhms | 5 V | 715 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 160 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 235 A | 2.4 mOhms | 4 V | 160 nC | Enhancement |
