- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
5,574
In-stock
|
Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 3.2 A | 2.2 Ohms | Enhancement | QFET | ||||
|
|
GET PRICE |
16,279
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 3.2A SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.2 A | 47 mOhms | 1.3 V | 5.6 nC | Enhancement | |||
|
|
GET PRICE |
10,679
In-stock
|
IR / Infineon | MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl | 12 V | SMD/SMT | Micro-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 170 mOhms | 0.7 V | 4.7 nC | ||||
|
|
GET PRICE |
2,602
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 3.2A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | ||||
|
|
GET PRICE |
2,477
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
8,570
In-stock
|
Nexperia | MOSFET 30 V, N-channel Trench MOSFET | 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 3.2 A | 49 mOhms | 1.5 V | 3.6 nC | Enhancement | ||||
|
|
GET PRICE |
2,427
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
1,219
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.2 A | 108 mOhms | 4.3 nC | PowerTrench | ||||||
|
|
GET PRICE |
1,306
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.2 A | 200 mOhms | 6.4 nC | |||||||
|
|
GET PRICE |
1,224
In-stock
|
IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 3.2 A | 92 mOhms | 4 V | 17 nC | Enhancement | ||||
|
|
GET PRICE |
480
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
3,346
In-stock
|
onsemi | MOSFET NFET SOT23 20V 3.2A 80MO | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 70 mOhms | 2.4 nC | |||||
|
|
GET PRICE |
1,009
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
658
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 3.2A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | ||||
|
|
GET PRICE |
5,099
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.2 A | 25 mOhms | 400 mV | 4.8 nC | Enhancement | |||
|
|
GET PRICE |
1,631
In-stock
|
Nexperia | MOSFET 20 V, N-channel Trench MOSFET | 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 120 mOhms | 400 mV | 5.7 nC | Enhancement | |||
|
|
GET PRICE |
440
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
2,560
In-stock
|
Diodes Incorporated | MOSFET 900mW 30Vdss | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.2 A | 60 mOhms | Enhancement | |||||
|
|
GET PRICE |
33
In-stock
|
Diodes Incorporated | MOSFET Dl 60V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.2 A | 180 mOhms | Enhancement | |||||
|
|
GET PRICE |
77
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 3.2A IPAK-3 CoolMOS S5 | 20 V | SMD/SMT | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | ||||
|
|
GET PRICE |
39,000
In-stock
|
onsemi | MOSFET 20V 3.2A N-Channel | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 85 mOhms | Enhancement | |||||
|
|
GET PRICE |
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 3.2A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | CoolMOS | ||||||||
|
|
VIEW | IXYS | MOSFET 3.2 Amps 500V 1.4 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.2 A | 1.4 Ohms | Enhancement | HyperFET | |||||
|
|
GET PRICE |
70,000
In-stock
|
Toshiba | MOSFET Small Signal Mosfet | +/- 10 V | UFM-3 | Reel | 1 Channel | Si | N-Channel, SBD | 20 V | 3.2 A | ||||||||||
|
|
VIEW | Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 118 mOhms | 350 mV | 10.8 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 600V 3.2A TO220-3 CoolMOS S5 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | |||||
|
|
GET PRICE |
2,525
In-stock
|
Diodes Incorporated | MOSFET 20V N-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 100 mOhms | 700 mV | 6.3 nC | Enhancement | |||
|
|
VIEW | Toshiba | MOSFET Vds=20V Id=3.2A 3Pin | 10 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 75 mOhms | Enhancement | ||||||
|
|
GET PRICE |
910
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.4 Ohms | Enhancement | CoolMOS | ||||
|
|
GET PRICE |
1,394
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 3.2A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement |
