- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,494
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CH 100V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.7 A | 100 mOhms | Enhancement | ||||||
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1,687
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.7 A | 48 mOhms | Enhancement | PowerTrench | |||||
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1,092
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 7.7A 180mOhm 13.3nC LogLv | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 7.7 A | 260 mOhms | 13.3 nC | ||||||||
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603
In-stock
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Diodes Incorporated | MOSFET Dl 20V N-Chnl UMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7.7 A | 35 mOhms | Enhancement | ||||||
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48
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7.7 A | 73 mOhms | 3.5 V | 65 nC | Enhancement |
