- Manufacture :
- Vgs - Gate-Source Voltage :
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- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,142
In-stock
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Diodes Incorporated | MOSFET P-Channel | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 600 mA | 900 mOhms | Enhancement | ||||||
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2,346
In-stock
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Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 2.5V | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 600 mA | 420 mOhms | Enhancement | PowerTrench | |||||
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80
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA | +/- 8 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 600 mA | 700 mOhms | - 1 V | 800 pC | Enhancement | ||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET Dual P-Ch 1.8V Spec Power Trench | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 600 mA | 400 mOhms | Enhancement | PowerTrench |
