- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 110 mOhms (1)
- 115 mOhms (1)
- 136 mOhms (1)
- 150 mOhms (1)
- 157 mOhms (1)
- 21 mOhms (1)
- 242 mOhms (1)
- 265 mOhms (1)
- 31 mOhms (1)
- 33 mOhms (2)
- 36 mOhms (1)
- 38 mOhms (2)
- 40 mOhms (1)
- 42.5 mOhms (1)
- 44 mOhms (1)
- 50 mOhms (3)
- 60 mOhms (1)
- 63 mOhms (1)
- 644 mOhms (2)
- 65 mOhms (3)
- 72 mOhms (1)
- 77 mOhms (1)
- 80 mOhms (1)
- 83 mOhms (1)
- 86 mOhms (1)
- 94 mOhms (1)
- 95 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
34 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
18,944
In-stock
|
Fairchild Semiconductor | MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET | 25 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 44 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
9,691
In-stock
|
Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 42.5 mOhms | Enhancement | |||||
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GET PRICE |
5,206
In-stock
|
Fairchild Semiconductor | MOSFET SSOT-6 P-CH -30V | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 50 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
3,694
In-stock
|
Fairchild Semiconductor | MOSFET SSOT-6 P-CH -20V | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 65 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
8,890
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | Si | P-Channel | - 60 V | - 4 A | 77 mOhms | - 1.2 V | 14 nC | Enhancement | |||||
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GET PRICE |
2,447
In-stock
|
Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V | - 4 A | 38 mOhms | 6.9 nC | |||||
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GET PRICE |
4,039
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V -4A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4 A | 644 mOhms | - 4 V | 12 nC | Enhancement | SIPMOS | ||
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GET PRICE |
1,329
In-stock
|
Fairchild Semiconductor | MOSFET SSOT6 SINGLE PCH | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 65 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
3,075
In-stock
|
Fairchild Semiconductor | MOSFET P-CHANNEL 2.5V PowerTrench MOS | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 65 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
2,414
In-stock
|
Fairchild Semiconductor | MOSFET SSOT6 SINGLE PCH | 25 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 50 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
1,438
In-stock
|
Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 110 mOhms | Enhancement | |||||
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GET PRICE |
4,768
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -4A 86mOhm 8.3nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 86 mOhms | 8.3 nC | |||||||
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GET PRICE |
2,975
In-stock
|
Diodes Incorporated | MOSFET PMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 115 mOhms | Enhancement | |||||
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GET PRICE |
4,715
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 63 mOhms | ||||||
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GET PRICE |
1,825
In-stock
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Nexperia | MOSFET PMN50UPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 50 mOhms | - 0.6 V | 10.5 nC | Enhancement | ||||
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|
GET PRICE |
2,465
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 4 A | 33 mOhms | - 1.1 V | 6 nC | Enhancement | |||
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|
GET PRICE |
213
In-stock
|
Nexperia | MOSFET P-CH -20 V -4 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 4 A | 36 mOhms | 15.5 nC | |||||||||
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GET PRICE |
463
In-stock
|
onsemi | MOSFET PFET FTKY S08 30V TR 3.8A | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 95 mOhms | Enhancement | |||||
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GET PRICE |
27,273
In-stock
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 94 mOhms | - 0.3 V to - 1 V | 14.1 nC | ||||
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GET PRICE |
5,321
In-stock
|
Toshiba | MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 12 V | SMD/SMT | uDFN-6 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4 A | 157 mOhms | ||||||||
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GET PRICE |
11,481
In-stock
|
Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 136 mOhms | - 2 V | 5.9 nC | ||||
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GET PRICE |
6,000
In-stock
|
Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 150 mOhms | - 0.3 V to - 1 V | 10.4 nC | ||||
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GET PRICE |
2,744
In-stock
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Texas instruments | MOSFET 20V P-channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 21 mOhms | - 1.05 V | 7.5 nC | Enhancement | NexFET | ||
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GET PRICE |
690
In-stock
|
Texas instruments | MOSFET 20V PCh NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 40 mOhms | - 0.75 V | 5.8 nC | NextFET | |||
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GET PRICE |
7,976
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | + /- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 31 mOhms | - 0.55 V | 15.8 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET P-Ch -100V -4A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4 A | 644 mOhms | - 4 V | 12 nC | Enhancement | ||||
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GET PRICE |
237,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 30 V | - 4 A | 72 mOhms | ||||||||||
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VIEW | Toshiba | MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 8V GS | 8 V | SMD/SMT | uDFN-6 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4 A | 242 mOhms | |||||||||
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VIEW | STMicroelectronics | MOSFET P-Ch 20 Volt 4 Amp | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 4 A | 80 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET Vds=-12V Id=-4A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 38 mOhms | Enhancement |
