- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
6,055
In-stock
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Fairchild Semiconductor | MOSFET P-CHAN -20V -8A 2.1W | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 8 A | 24 mOhms | PowerTrench | |||||||
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12,000
In-stock
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IR / Infineon | MOSFET HEXFET P-CH Low 0.020 Ohm -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 35 mOhms | 40 nC | Enhancement | ||||
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GET PRICE |
2,574
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | Enhancement | ||||
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GET PRICE |
2,602
In-stock
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Fairchild Semiconductor | MOSFET -12V P-Channel PowerTrench MOSFET | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 8 A | 22 mOhms | PowerTrench | |||||
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GET PRICE |
3,472
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 24 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
2,319
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 8A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | |||||||
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GET PRICE |
2,573
In-stock
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Vishay Semiconductors | MOSFET -60V -8A 45W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8 A | 0.07 Ohms | - 2.5 V | 40 nC | Enhancement | TrenchFET | ||
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GET PRICE |
3,515
In-stock
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Diodes Incorporated | MOSFET 40V P-CH MOSFET | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 8 A | 25 mOhms | - 1.3 V | 33.7 nC | Enhancement | ||||
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GET PRICE |
1,171
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | QFET | ||||
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GET PRICE |
386
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | |||||
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GET PRICE |
171
In-stock
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IXYS | MOSFET -8 Amps -500V 1.2 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 8 A | 1.2 Ohms | - 5 V | 130 nC | Enhancement | |||
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GET PRICE |
2,774
In-stock
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Vishay Semiconductors | MOSFET 20V 8A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 0.029 Ohms | - 2.5 V | 27 nC | Enhancement | TrenchFET | ||
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GET PRICE |
30
In-stock
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IXYS | MOSFET -8 Amps -500V 1.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 8 A | 1.2 Ohms | Enhancement | |||||
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GET PRICE |
346
In-stock
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Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 45 mOhms | Enhancement | |||||
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GET PRICE |
120,000
In-stock
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IR / Infineon | MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC | |||||||
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GET PRICE |
6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V TSOP-6 | +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 0.02 Ohms | - 1 V | 52.2 nC | Enhancement | |||
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GET PRICE |
3,018
In-stock
|
Toshiba | MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8 A | 104 mOhms | |||||||||
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VIEW | Siliconix / Vishay | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 8 A | 0.021 Ohms | - 1 V | 28 nC | Enhancement | ||||
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GET PRICE |
2,367
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 8 A | 20 mOhms | 40 nC | Enhancement | ||||
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GET PRICE |
293
In-stock
|
IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC |
