- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,085
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 4.6mOhms 58nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 20 A | 6.8 mOhms | 58 nC | |||||||||
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5,686
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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88
In-stock
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IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
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16,000
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -20A 4.6mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 20 A | 6.8 mOhms | 58 nC | |||||||||
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895
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh FET 45mOhm -10V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 20 A | 40 mOhms | - 1 V | 23.2 nC | Enhancement | ||||
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8,404
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement |
