- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,820
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | ATPAK-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 35 A | 29.5 mOhms | ||||||||
|
|
GET PRICE |
3,555
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET | +/- 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 35 A | 11 mOhms | - 2 V | 47.5 nC | Enhancement | |||
|
|
GET PRICE |
115
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 35 A | 25 mOhms | - 2.5 V | 30 nC | Enhancement |
