- Manufacture :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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2,545
In-stock
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IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | 38.7 nC | Enhancement | ||||
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1,461
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 205mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | 38.7 nC | Enhancement | |||
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246
In-stock
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Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | ||||||
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VIEW | Infineon Technologies | MOSFET Automotive MOSFET 150V, 295mOhm, D2Pak | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | |||||||||
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4
In-stock
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IR / Infineon | MOSFET 20V -150V P-CH FET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | Enhancement |
