- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
25,170
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -17A 100mOhm 23.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 17 A | 100 mOhms | 23.3 nC | |||||||
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GET PRICE |
1,312
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 17 A | 70 mOhms | Enhancement | QFET | ||||
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GET PRICE |
15,240
In-stock
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onsemi | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 17 A | 120 mOhms | Enhancement | QFET | ||||
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GET PRICE |
2,806
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 30V 20Vgs | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 17 A | 6.5 mOhms | - 2.1 V | 59.2 nC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W | - 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 17 A | 13 Ohms | - 0.96 V | 0.35 nC | Enhancement |
