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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,300
In-stock
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Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 108 A | 3 mOhms | 72 nC | Enhancement | ||||||
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25
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 108 A | 16 mOhms | HyperFET | ||||||||||
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7
In-stock
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IXYS | MOSFET 650V/108A Ultra Junction X2-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 108 A | 24 mOhms | 2.7 V | 225 nC | Enhancement |