- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
2,235
In-stock
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Vishay Semiconductors | MOSFET Dual N-Channel 75V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 75 V, 75 V | 17 A, 17 A | 0.041 Ohms, 0.041 Ohms | 1.5 V, 1.5 V | 21 nC, 21 nC | Enhancement | TrenchFET | ||
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GET PRICE |
2,500
In-stock
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Texas instruments | MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... | +/- 10 V, +/- 10 V | SMD/SMT | WSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 17 A, 17 A | 4.6 mOhms, 4.6 mOhms | 0.6 V, 0.6 V | 28 nC, 28 nC | Enhancement | |||
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GET PRICE |
250
In-stock
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Texas instruments | MOSFET 30-V Dual N-Channel NexFET Power MOSFETs 8-WSO... | +/- 10 V, +/- 10 V | SMD/SMT | WSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 17 A, 17 A | 4.6 mOhms, 4.6 mOhms | 0.6 V, 0.6 V | 28 nC, 28 nC | Enhancement | |||
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VIEW | onsemi | MOSFET Pwr MOSFET 60V 17A 39mOhmDual N-CH | 20 V, 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 17 A, 17 A | 31 mOhms, 31 mOhms | 1 V, 1 V | 20 nC, 20 nC | Enhancement |
