- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
2,997
In-stock
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Vishay Semiconductors | MOSFET -12V Vds -60A Id AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 60 A | 4.8 mOhms | - 1.5 V | 150 nC | Enhancement | |||
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GET PRICE |
671
In-stock
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Toshiba | MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 60 A | 11.2 mOhms | |||||||||
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GET PRICE |
555
In-stock
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Texas instruments | MOSFET -20V, P-channel NexFET Pwr MOSFET | 12 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 10.1 mOhms | - 0.9 V | 10.8 nC | Enhancement | NexFET | ||
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GET PRICE |
836
In-stock
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Toshiba | MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 60 A | 6.3 mOhms | |||||||||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 60 A | 10 mOhms | - 2.6 V | 47 nC | Enhancement | ||||
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GET PRICE |
8,906
In-stock
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Toshiba | MOSFET P-Channel Mosfet 20V UMOS-VI | 12 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 1.35 mOhms | 182 nC | Enhancement |
