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12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
1,342
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||
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GET PRICE |
997
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||
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GET PRICE |
1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||
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GET PRICE |
450
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220FP CoolMOS CFD2 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | ||
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GET PRICE |
1
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11.4 A | 960 mOhms | Enhancement | QFET | ||||
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GET PRICE |
58
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 310 mOhms | 4 V | 41 nC | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220FP CoolMOS CFD2 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 310 mOhms | CoolMOS | |||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 11.4A TO247-3 | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 310 mOhms | CoolMOS |
