- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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30,000
In-stock
|
Fairchild Semiconductor | MOSFET 20V P-Channel PowerTrench MOSFET | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 18 A | 8 mOhms | PowerTrench | ||||||
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GET PRICE |
2,714
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | Enhancement | ||||||
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GET PRICE |
3,007
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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GET PRICE |
2,242
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | Enhancement | |||||
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GET PRICE |
210
In-stock
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IXYS | MOSFET -100V -18A | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 2.5 V to - 4.5 V | 39 nC | Enhancement | ||||
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GET PRICE |
1,083
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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GET PRICE |
390
In-stock
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IXYS | MOSFET 18 Amps 100V 0.12 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 4.5 V | 39 nC | Enhancement | TrenchP | ||||
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GET PRICE |
1,975
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -55V -18A 110mOhm 21.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | ||||||||
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GET PRICE |
37
In-stock
|
IXYS | MOSFET -18 Amps -600V 0.385 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 18 A | 385 mOhms | - 4 V | 196 nC | Enhancement | PolarP | ||||
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GET PRICE |
404
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -55V -18A 110mOhm 21.3nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | ||||||||
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GET PRICE |
2,475
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 18 A | 16 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | |||
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VIEW | IXYS | MOSFET 18 Amps 100V 0.12 Rds | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | ||||||||||||
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VIEW | Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 0.009 Ohms | - 2.5 V | 50 nC | Enhancement | TrenchFET | ||||
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VIEW | Toshiba | MOSFET MOSFET -30V -18A | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 25 mOhms | ||||||||||||
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VIEW | Toshiba | MOSFET N-Ch -30V FET 7420pF -18A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 4.2 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET P-Ch -30V FET 27W -18A 1600pF 38nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 18 A | 25 mOhms | 38 nC |