- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,189
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 330 mOhms | Enhancement | |||||
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1,231
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 P-CH -30V | 20 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 160 mOhms | Enhancement | PowerTrench | ||||
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3,960
In-stock
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Diodes Incorporated | MOSFET 100V P-Chanl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1.6 A | 450 mOhms | Enhancement | |||||
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9,332
In-stock
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Vishay Semiconductors | MOSFET 60V (D-S) -/+20V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 100 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.6 A | 0.23 Ohms | - 2.5 V | 5.4 nC | Enhancement | TrenchFET | ||
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8,545
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 227 mOhms | - 2.6 V | 2.2 nC | Enhancement | ||||
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1,447
In-stock
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Texas instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 15 V | - 1.6 A | 400 mOhms | Enhancement | |||||
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1,245
In-stock
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Texas instruments | MOSFET 20V PCH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.6 A | 150 mOhms, 285 mOhms | - 0.8 V | 1.9 nC | NexFET | |||
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47,750
In-stock
|
Texas instruments | MOSFET 20V P-CH FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 245 mOhms | - 950 mV | 0.96 nC | Depletion | NexFET | ||
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1,997
In-stock
|
Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 47 mOhms | - 850 mV | 2.2 nC | Enhancement | NexFET | ||
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769
In-stock
|
Texas instruments | MOSFET MOSFET 10ns RT | - 15 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Tube | 1 Channel | Si | P-Channel | - 15 V | - 1.6 A | 180 mOhms | Enhancement | |||||
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1,950
In-stock
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Texas instruments | MOSFET 20V,P-Ch FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 245 mOhms | - 950 mV | 0.96 nC | ||||
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36,214
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 P-CH -20V | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 115 mOhms | Enhancement | PowerTrench | ||||
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7,761
In-stock
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onsemi | MOSFET PCH 4V Power MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 617 mOhms | - 2.6 V | 2.2 nC | Enhancement | |||
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GET PRICE |
1,121
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 295 mOhms | |||||||||
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GET PRICE |
675
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 303 mOhms |
