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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
SPA15N60CFD
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485
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Infineon Technologies MOSFET N-Ch 600V 13.4A TO220FP CoolMOS CFD 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 13.4 A 330 mOhms Enhancement CoolMOS
SPW15N60CFD
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240
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Infineon Technologies MOSFET N-Ch 600V 13.4A TO247-3 CoolMOS CFD 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 13.4 A 330 mOhms Enhancement CoolMOS
BSC079N10NS G
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5,000
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Infineon Technologies MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 13.4 A 7.9 mOhms Enhancement OptiMOS
SPP15N60CFDXKSA1
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Infineon Technologies MOSFET N-Ch 650V 13.4A TO220-3   Through Hole TO-220-3     Tube 1 Channel Si N-Channel 650 V 13.4 A 330 mOhms   CoolMOS
SPP15N60CFD
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Infineon Technologies MOSFET N-Ch 600V 13.4A TO220-3 CoolMOS CFD 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 13.4 A 330 mOhms Enhancement CoolMOS
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