- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,580
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | 20 V | SMD/SMT | DirectFET-SJ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.7 A | 28 mOhms | 14 nC | Enhancement | Directfet | |||||
|
2,436
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 5.7A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 3 V | 31 nC | CoolMOS | |||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 5.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | ||||
|
3,689
In-stock
|
Fairchild Semiconductor | MOSFET 20V 5.7A 30OHM SINGLE NCH 2.5V | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 30 mOhms | Enhancement | PowerTrench | ||||||
|
655
In-stock
|
Fairchild Semiconductor | MOSFET SupreMOS 9A | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 330 mOhms | SupreMOS | |||||||||
|
4,180
In-stock
|
Infineon Technologies | MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8 | 12 V | SMD/SMT | Micro-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 14 nC | |||||||||
|
2,479
In-stock
|
onsemi | MOSFET NFET DPAK 600V 5.9A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 820 mOhms | 2 V | 12 nC | Enhancement | |||||
|
765
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | ||||
|
729
In-stock
|
Diodes Incorporated | MOSFET N-CHANNEL 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.7 A | 50 mOhms | Enhancement | |||||||
|
443
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.7A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.7 A | 1 Ohms | Enhancement | CoolMOS | ||||||
|
127
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.7A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.7 A | 1 Ohms | Enhancement | CoolMOS | ||||||
|
251
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 5.7A TO220-3 CoolMOS E6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | CoolMOS | |||||||
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.7A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.7 A | 1 Ohms | 34 nC | Enhancement | CoolMOS | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | ||||
|
1,396
In-stock
|
Infineon Technologies | MOSFET N-Ch 800V 5.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | ||||
|
114
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | Micro-8 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 5.7 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |