- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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30,843
In-stock
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Fairchild Semiconductor | MOSFET P-Ch PowerTrench Specified 1.8V | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 40 mOhms | Enhancement | PowerTrench | ||||
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10,020
In-stock
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Fairchild Semiconductor | MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET | 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 2.6 A | 140 mOhms | PowerTrench | ||||||
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GET PRICE |
22,868
In-stock
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onsemi | MOSFET -60V 2.6A P-Channel | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.6 A | 145 mOhms | Enhancement | |||||
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GET PRICE |
1,985
In-stock
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onsemi | MOSFET PFET SOT223 60V 2.6A 140M | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.6 A | 154 mOhms | - 4 V | 14.3 nC | ||||
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2,256
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Channel PowerTrench | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 95 mOhms | Enhancement | PowerTrench | ||||
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4,407
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1010-4,3K | - 5 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 102 mOhms | 3.7 nC | Enhancement | ||||
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GET PRICE |
1,613
In-stock
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Diodes Incorporated | MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 2.6 A | 250 mOhms | - 1 V | 18 nC | Enhancement | |||
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885
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.08W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 110 mOhms | Enhancement | |||||
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7,085
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 250 mOhms | - 0.3 V to - 1 V | 4.7 nC | ||||
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20,600
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -20V -2.6A 135mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 157 mOhms | - 1.1 V | 2.9 nC | ||||
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GET PRICE |
1,774
In-stock
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Fairchild Semiconductor | MOSFET 12V/8V, 40/50/80 MO, P-CH, SINGLE, SSOT3 | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 80 mOhms | - 0.6 V | 12 nC |
