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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Packaging :
Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FQPF11P06
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2,368
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Fairchild Semiconductor MOSFET 60V P-Channel QFET 25 V Through Hole TO-220FP-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 60 V - 8.6 A 175 mOhms     Enhancement QFET
DMP4025LK3-13
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3,417
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Diodes Incorporated MOSFET P-Ch Enh Mode FET 40V 25mOhm -8.6A +/- 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 40 V - 8.6 A 18 mOhms - 1.8 V 33.7 nC Enhancement  
DMP3008SFGQ-7
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2,000
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Diodes Incorporated MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A +/- 20 V SMD/SMT PowerDI3333-8 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 8.6 A 25 mOhms - 2.1 V 47 nC Enhancement  
DMP3008SFGQ-13
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3,000
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Diodes Incorporated MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A +/- 20 V SMD/SMT PowerDI3333-8 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 8.6 A 25 mOhms - 2.1 V 47 nC Enhancement  
DMP3008SFG-13
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Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 3K   SMD/SMT PowerDI3333-8     Reel 2 Channel Si P-Channel - 30 V - 8.6 A 25 mOhms        
IRF7700TRPBF
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RFQ
1,779
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IR / Infineon MOSFET MOSFT PCh -20V A mOhm 59nC   SMD/SMT TSSOP-8   + 150 C Reel 1 Channel Si P-Channel - 20 V - 8.6 A 15 mOhms - 1.2 V 89 nC    
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