- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,035
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 70 mOhms | 39.3 nC | |||||||
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GET PRICE |
4,833
In-stock
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Fairchild Semiconductor | MOSFET -20V P-Channel 2.5V PowerTrench MOSFET | 12 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.8 A | 30 mOhms | Enhancement | PowerTrench | ||||
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49,910
In-stock
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Diodes Incorporated | MOSFET 2xP-Channel 2W | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5.8 A | 40 mOhms | Enhancement | |||||
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GET PRICE |
2,380
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 65 mOhms | - 2.1 V | 10.1 nC | Enhancement | |||
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GET PRICE |
573
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 70 mOhms | - 1 V | 59 nC | Enhancement | |||
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2,700
In-stock
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onsemi | MOSFET PFET 2X2 20V 9.5A 42MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.8 A | 90 mOhms | - 0.67 V | 13 nC | Enhancement | |||
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GET PRICE |
2,642
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 28 mOhms | - 2.4 V | 19.3 nC | Enhancement | PowerDI | ||
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VIEW | IR / Infineon | MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 45 mOhms | - 1 V | 59 nC |
