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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,023
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 3.5 V | 82 nC | SuperFET II | |||||
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1,448
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 190 mohm 650V FRFET | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 5 V | 60 nC | SuperFET II FRFET | ||||
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472
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.6 A | 190 mOhms | 63 nC | SuperFET II | ||||||
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450
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 190 mOhm, FRFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 5 V | 60 nC | Enhancement | SuperFET II FRFET | |||
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508
In-stock
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Fairchild Semiconductor | MOSFET SprFET2 650V 190mohm FRFET TO247 longlead | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 168 mOhms | 5 V | 60 nC | SuperFET II | ||||
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142
In-stock
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Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 401 mOhms | 3 V | 63 nC | Enhancement | SuperFET II |