- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
3,403
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | ||
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GET PRICE |
580
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 140mOhm 12A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 800 mV | 33.7 nC | Enhancement | ||
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GET PRICE |
465,000
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 7.2 A | 25 mOhms | - 1.8 V | 14 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET P-CH 20V, 7.3A | 12 V | SMD/SMT | PS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.2 A | 80 mOhms | Enhancement |
