- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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9,963
In-stock
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Nexperia | MOSFET 20 V, dual P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.4 A | 940 mOhms | - 450 mV | 1.3 nC | Enhancement | ||
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2,623
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 87 mOhms | 400 mV | 4.8 nC | Enhancement | |||
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8,392
In-stock
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Toshiba | MOSFET Nch MOSFET | +/- 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 4 Ohms | - 1 V | 1.6 nC | Enhancement | ||
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GET PRICE |
8,735
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 940 mOhms | - 450 mV | 1.3 nC | Enhancement |
