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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Packaging Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance
STW31N65M5
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RFQ
710
In-stock
STMicroelectronics MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh M5 Through Hole TO-247-3 Tube Si N-Channel 650 V 13.9 A 148 mOhms
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