- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
223,060
In-stock
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Fairchild Semiconductor | MOSFET P-Channel FET Enhancement Mode | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 180 mA | 5 Ohms | Enhancement | ||||
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GET PRICE |
327,120
In-stock
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Nexperia | MOSFET P-CH -50 V -180 mA | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 7.5 Ohms | 0.35 nC | |||||||
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GET PRICE |
4,587
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss | - 5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 10 Ohms | - 2 V | Enhancement | |||
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GET PRICE |
2,634
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 18 mOhms | - 2.1 V | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss | - 5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 10 Ohms | - 2 V | Enhancement |
