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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,484
In-stock
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Diodes Incorporated | MOSFET 1.4W 20V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.9 A | 29 mOhms | Enhancement | ||||
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2,175
In-stock
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Texas instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | ||
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713
In-stock
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Texas instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | ||
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VIEW | Toshiba | MOSFET N-Ch 30V FET 5.9A 2.2W 232pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 74 mOhms |
