- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
306,500
In-stock
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Nexperia | MOSFET PMV50EPEA/TO-236AB/REEL 7 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.2 A | 35 mOhms | - 3 V | 19.2 nC | Enhancement | |||
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GET PRICE |
3,372
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 4.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.2 A | 850 mOhms | Enhancement | SIPMOS | ||||
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GET PRICE |
8,666
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 52 mOhms | - 0.9 V | 10.2 nC | Enhancement | |||
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GET PRICE |
2,436
In-stock
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Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 60 mOhms | Enhancement | |||||
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GET PRICE |
3,000
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 80 mOhms | - 0.9 V | 10.4 nC | Enhancement | |||
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GET PRICE |
2,347
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 200 mOhms | - 0.9 V | 10.2 nC | Enhancement | |||
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GET PRICE |
2,250
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 40 mOhms | - 900 mV | 10.2 nC | Enhancement | |||
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GET PRICE |
175,500
In-stock
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onsemi | MOSFET -20V -4.2A P-Channel | 12 V | SMD/SMT | SC-88-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 180 mOhms | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 33mOhm -20V -5.8A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 28 mOhms | - 1.1 V | 5.4 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 80 mOhms | - 0.9 V | 10.4 nC | Enhancement | PowerDI |
