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Rds On - Drain-Source Resistance :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK16A60W,S4VX
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RFQ
1,002
In-stock
Toshiba MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC 30 V Through Hole TO-220FP-3 Tube 1 Channel Si N-Channel 600 V 15.8 A 160 mOhms 2.7 V to 3.7 V 38 nC Enhancement
TK16A60W5,S4VX
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RFQ
30
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Toshiba MOSFET N-Ch 15.8A 40W FET 600V 1350pF 43nC   Through Hole TO-220FP-3   1 Channel Si N-Channel 600 V 15.8 A 190 mOhms   43 nC  
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