- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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328
In-stock
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IXYS | MOSFET -44 Amps -150V 0.065 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 150 V | - 44 A | 65 mOhms | |||||||||
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GET PRICE |
384
In-stock
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IXYS | MOSFET -44 Amps -150V 0.065 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 44 A | 65 mOhms | - 2 V to - 4 V | 175 nC | Enhancement | ||
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VIEW | IXYS | MOSFET -44 Amps -150V 0.065 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 44 A | 65 mOhms | |||||||||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 44 A | 14 mOhms | - 2.6 V | 34 nC | Enhancement |
