- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
2,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 100 A, 100 A | 3.4 mOhms, 3.4 mOhms | 1.5 V, 1.5 V | 120 nC, 120 nC | Enhancement | ||
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GET PRICE |
2,000
In-stock
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Siliconix / Vishay | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Tube | 2 Channel | Si | N-Channel | 40 V, 40 V | 100 A, 100 A | 0.0029 Ohms, 0.0029 Ohms | 2.5 V, 2.5 V | 75 nC, 75 nC | Enhancement | ||
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VIEW | Vishay Semiconductors | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V, 20 V | 100 A, 100 A | 0.002 Ohms | 1.5 V | 110 nC | Enhancement |
