- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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431
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 12V VGSS | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 55 mOhms, 55 mOhms | - 1.1 V, - 1.1 V | 6.5 nC, 6.5 nC | Enhancement | ||
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GET PRICE |
2,480
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement | ||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL N-CH | +/- 12 V, +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 4.6 A, - 4.6 A | 54 mOhms, 54 mOhms | - 1.2 V, - 1.2 V | - 10 nC, - 10 nC | Enhancement |
