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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQM120P04-04L_GE3
1+
$3.030
10+
$2.440
100+
$2.220
250+
$2.000
800+
$1.520
RFQ
795
In-stock
Siliconix / Vishay MOSFET P-Channel 40V AEC-Q101 Qualified +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si P-Channel - 40 V - 120 A 0.0034 Ohms - 2.5 V 330 nC Enhancement TrenchFET
SQM120P10_10M1LGE3
1+
$3.200
10+
$2.570
100+
$2.340
250+
$2.110
RFQ
280
In-stock
Siliconix / Vishay MOSFET P Ch -100Vds 20Vgs +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 100 V - 120 A 0.0081 Ohms - 2.5 V 190 nC Enhancement  
SUP70101EL-GE3
GET PRICE
RFQ
5,000
In-stock
Siliconix / Vishay MOSFET -100V Vds TrenchFET -/+20V Vgs TO-220AB 20 V Through Hole TO-220AB - 55 C + 175 C Tube 1 Channel   P-Channel - 100 V - 120 A 11.4 mOhms - 2.5 V 125 nC    
SQP90P06-07L_GE3
500+
$1.780
1000+
$1.510
2500+
$1.430
5000+
$1.320
VIEW
RFQ
Siliconix / Vishay MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified +/- 20 V Through Hole TO-220AB-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 60 V - 120 A 0.0056 Ohms - 2.5 V 270 nC Enhancement  
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