- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,850
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.6 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | |||
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451
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | +/- 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 2.9 mOhms | - 2.2 V | 234 nC | Enhancement | OptiMOS | |||
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624
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | 158 nC | OptiMOS | |||||
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647
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | OptiMOS |
