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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,462
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | ||
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2,339
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Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | OptiMOS | ||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 39.6 A | 13.5 mOhms | - 3.1 V | 30 nC | Enhancement |
