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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Packaging :
Rds On - Drain-Source Resistance :
11 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB65R110CFD
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1,063
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Infineon Technologies MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
IPB65R110CFDA
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RFQ
10,630
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Infineon Technologies MOSFET N-Ch 650V 99.6A D2PAK-2 20 V SMD/SMT TO-263-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
IPW65R110CFD
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RFQ
3,500
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Infineon Technologies MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2 +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
IPP65R110CFD
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RFQ
404
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Infineon Technologies MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 31.2 A 110 mOhms   118 nC   CoolMOS
IPW65R110CFDA
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RFQ
316
In-stock
Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3 +/- 20 V Through Hole TO-247-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
IPA65R110CFD
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RFQ
48,000
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Infineon Technologies MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 31.2 A 110 mOhms   118 nC   CoolMOS
65F6110A
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RFQ
2,200
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Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3 +/- 20 V Through Hole TO-247-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
IPP65R110CFDAAKSA1
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RFQ
232
In-stock
Infineon Technologies MOSFET N-Ch 650V 31.2A TO220-3   Through Hole TO-220-3     Tube 1 Channel Si N-Channel 650 V 31.2 A 110 mOhms       CoolMOS
IPB65R110CFDAATMA1
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RFQ
70
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Infineon Technologies MOSFET N-Ch 650V 99.6A D2PAK-2 20 V SMD/SMT TO-263-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
IPW65R110CFDFKSA1
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RFQ
210
In-stock
Infineon Technologies MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2 +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
IPB65R110CFDATMA1
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RFQ
Infineon Technologies MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 20 V SMD/SMT TO-263-3 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 31.2 A 99 mOhms 3.5 V 118 nC Enhancement CoolMOS
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