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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,109
In-stock
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IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | ||
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1,019
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||
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800
In-stock
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Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 87 nC | ||||||
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13,605
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 6mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||
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GET PRICE |
204
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||
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392
In-stock
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IR / Infineon | MOSFET MOSFT 100V 127A 6mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||
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GET PRICE |
370,000
In-stock
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Infineon Technologies | MOSFET 100V 127A 6mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | ||||||
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2,875
In-stock
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onsemi | MOSFET NFET SO8FL 30V 116A 3.4MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 127 A | 2.3 mOhms | 1.3 V | 30 nC | Enhancement |
