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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
734
In-stock
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IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | ||
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GET PRICE |
800
In-stock
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Infineon Technologies | MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 426 A | 1.2 mOhms | 3.9 V | 300 nC | StrongIRFET |
