- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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32,844
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2 Ohms | 1.2 V | 870 pC | Enhancement | ||
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289,640
In-stock
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onsemi | MOSFET NFET SOT23 60V 310MA 2.5 | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1 Ohms | 1.9 V | 810 pC | Enhancement | ||
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6,479
In-stock
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Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2.8 Ohms | 0.5 nC | ||||
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12,817
In-stock
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Fairchild Semiconductor | MOSFET NCHAN Enhance MOSFET | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 3 Ohms | Enhancement | |||||||
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17,206
In-stock
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Nexperia | MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1 Ohms | 0.6 nC | Enhancement | |||
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54
In-stock
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Diodes Incorporated | MOSFET N-Chnl 250V | 40 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 310 mA | 9.5 Ohms | Enhancement | ||||
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102,000
In-stock
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onsemi | MOSFET SMALL SIGNAL MOSFET 6.8V LO C | 20 V | SMD/SMT | SC-70-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1.6 Ohms | Enhancement | ||||
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23,994
In-stock
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onsemi | MOSFET NFET 60V 115MA 7OHM | 20 V | SMD/SMT | SC-70-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1.33 Ohms | 2.5 V | 0.7 nC | |||
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12,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2 Ohms | 1 V | 500 pC | Enhancement |
