- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 3.9 A, - 3.9 A | 70 mOhms, 70 mOhms | - 3 V | 11 nC | Enhancement | ||
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VIEW | Siliconix / Vishay | MOSFET P Ch -20Vds 8Vgs AEC-Q101 Qualified | +/- 8 V, +/- 8 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 3.9 A, - 3.9 A | 0.13 Ohms, 0.13 Ohms | - 1.5 V, - 1.5 V | 4.6 nC, 4.6 nC | Enhancement |
