- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,526
In-stock
|
Diodes Incorporated | MOSFET 250V P-Ch Enh FET 40Vgss 81pF 2.8nC | 40 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 10 Ohms | - 500 mV | 2.8 nC | Enhancement | ||
|
|
GET PRICE |
1,082
In-stock
|
Infineon Technologies | MOSFET P-Ch -250V -260mA SOT-223-4 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 7.5 Ohms | - 2 V | - 5.4 nC | Enhancement | ||
|
|
GET PRICE |
595
In-stock
|
Infineon Technologies | MOSFET P-Ch -250V -260mA SOT-223-4 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 260 mA | 7.5 Ohms | - 2 V | - 5.4 nC | Enhancement | ||
|
|
VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 260 mA | 6 Ohms | - 800 mV | 3.7 nC | Enhancement |
