- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
3,433
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -12V -11.5A 14mOhm 38nC | 8 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.5 A | 14 mOhms | 38 nC | |||||||
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GET PRICE |
1,210
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 11.5 A | 470 mOhms | Enhancement | |||||
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GET PRICE |
1,762
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 11.5 A | 470 mOhms | Enhancement | QFET | ||||
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GET PRICE |
3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | |||
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GET PRICE |
701
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 11.5 A | 290 mOhms | Enhancement | QFET | ||||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement |
