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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | |
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Toshiba | MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 80 V | 214 A | 3.2 mOhms | 130 nC |
