- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,393
In-stock
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Texas instruments | MOSFET 30 V Dual N-Channel NexFET Power MOSFETs | 20 V, 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 5.0 A | 27 mOhms, 27 mOhms | 1.2 V, 1.2 V | 6 nC, 6 nC | Enhancement | NexFET | ||
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GET PRICE |
29,980
In-stock
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Texas instruments | MOSFET 30V Dual N-Ch Common Drain NexFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.0 A | 42 mOhms | 1.6 V | 2.2 nC | Enhancement | NexFET |
