- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,908
In-stock
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IR / Infineon | MOSFET MOSFT PCh -30V -9.2A 19.4mOhm 25Vgs | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.2 A | 25.6 mOhms | - 1.8 V | 14 nC | Enhancement | |||
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7,499
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -9.2A 19.4mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 9.2 A | 32.5 mOhms | 14 nC | ||||||||
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50,140
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -12V 9.2A | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | - 0.9 V | 57 nC | ||||||
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3,059
In-stock
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Infineon Technologies | MOSFET 20V DUAL P-CH HEXFET 17mOhms 38nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | 38 nC | Enhancement | ||||
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1,708
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH HEXFET 16.3mOhms | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | |||||||
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12,000
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -9.2A 16.3mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 9.2 A | 13 mOhms | 19 nC | |||||||
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GET PRICE |
5,819
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K | 12 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.2 A | 25 mOhms | - 1.2 V | 113 nC | Enhancement |