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Vgs - Gate-Source Voltage :
Package / Case :
Packaging :
Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRF9393TRPBF
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RFQ
5,908
In-stock
IR / Infineon MOSFET MOSFT PCh -30V -9.2A 19.4mOhm 25Vgs 25 V SMD/SMT SO-8 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 9.2 A 25.6 mOhms - 1.8 V 14 nC Enhancement
IRF9333TRPBF
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RFQ
7,499
In-stock
IR / Infineon MOSFET MOSFT P-Ch -30V -9.2A 19.4mOhm 20 V SMD/SMT SO-8     Reel   Si P-Channel - 30 V - 9.2 A 32.5 mOhms   14 nC  
IRF7329TRPBF
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RFQ
50,140
In-stock
IR / Infineon MOSFET MOSFT DUAL PCh -12V 9.2A   SMD/SMT SO-8   + 150 C Reel 2 Channel Si P-Channel - 12 V - 9.2 A 17 mOhms - 0.9 V 57 nC  
IRF7329PBF
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RFQ
3,059
In-stock
Infineon Technologies MOSFET 20V DUAL P-CH HEXFET 17mOhms 38nC 8 V SMD/SMT SO-8 - 55 C + 150 C Tube 2 Channel Si P-Channel - 12 V - 9.2 A 17 mOhms   38 nC Enhancement
IRF9358PBF
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RFQ
1,708
In-stock
Infineon Technologies MOSFET DUAL -30V P-CH HEXFET 16.3mOhms 20 V SMD/SMT SO-8     Tube 2 Channel Si P-Channel - 30 V - 9.2 A 13 mOhms   19 nC  
IRF9358TRPBF
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RFQ
12,000
In-stock
IR / Infineon MOSFET MOSFT DUAL PCh -9.2A 16.3mOhm -4.5V capbl 20 V SMD/SMT SO-8     Reel 2 Channel Si P-Channel - 30 V - 9.2 A 13 mOhms   19 nC  
DMP2018LFK-7
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RFQ
5,819
In-stock
Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K 12 V SMD/SMT U-DFN2523-6 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 9.2 A 25 mOhms - 1.2 V 113 nC Enhancement
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