- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,434
In-stock
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Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | |||
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3,578
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 190 mOhms | - 1 V | 9 nC | Enhancement | |||
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4,623
In-stock
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Diodes Incorporated | MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF | 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6.6 A | 25 mOhms | Enhancement | |||||
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2,576
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -20Vdss -40A | +/- 8 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.6 A | 19 mOhms | - 1 V | 29 nC | Enhancement | |||
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238
In-stock
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Diodes Incorporated | MOSFET 12V P-Ch Enh Mode 19Vgs 2712pF 28.6nC | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6.6 A | 32 mOhms | - 0.8 V | 48.3 nC | Enhancement |
