- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,120
In-stock
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IR / Infineon | MOSFET DUAL -55V P-CH 20V VGS 55V BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | 26 nC | Enhancement | ||||||
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49,860
In-stock
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onsemi | MOSFET 30V P-Ch PowerTrench | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 130 mOhms | Enhancement | PowerTrench | ||||||
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2,539
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 130 mOhms | Enhancement | PowerTrench | ||||||
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1,992
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 20Vgs 587pF 12.2nC | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.4 A | 64 mOhms | - 3 V | 12.2 nC | Enhancement | |||||
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1,008
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -40V -3.4A 112mOhm 25nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.4 A | 190 mOhms | 25 nC | |||||||||
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52,200
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -55V 3.4A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | 26 nC | |||||||||
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1,181
In-stock
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Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.4 A | 1.4 Ohms | Enhancement | QFET | ||||||
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2,945
In-stock
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Diodes Incorporated | MOSFET P-Channel | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.4 A | 80 mOhms | Enhancement | |||||||
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2,710
In-stock
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Nexperia | MOSFET 30V P-channel MOSFET | 12 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 85 mOhms | - 1 V | 7.8 nC | Enhancement | |||||
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4,930
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.4 A | 154 mOhms | - 0.3 V to - 1 V | 10.4 nC | ||||||
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4,000
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | - 3 V | 26 nC |